AlInGaN/GaN异质结构材料生长及特性研究

Study on growth and characteristic of alInGaN/GaN heterostructures

AlInGaN四元合金具有独立控制禁带宽度和晶格常数的特性,利用这一特性可以实现性能更为出色的异质结构材料.利用MOCVD技术生长获得了AlInGaN/GaN异质结构,通过汞探针C-V测量和Hall效应测量,发现其电学特性明显优于常规AlGaN/GaN异质结构,通过XDR和AFM分析,发现其势垒层结晶质量十分出色,但表面形貌与常规异质结构相比还存在一定差距.

The band gap and lattice constant of AIInGaN quaternary alloy materials can be controlled independently. Based on the characteristic, more outstanding performance heterostructures can be obtained. In this paper, the AlInGaN/GaN heterostructures have been obtained by MOCVD growth technique, they were studied thoroughly by C-V,Hall,XDR and AFM. The experiment results show that besides somewhat rough superficial appearance, AlInGaN/GaN heterostructures have better characteristics compared with the conventional AlGaN/GaN heterostrnctures.