摘要
本文分两部分概括介绍第21届ISPSD09发表的有关功率半导体器件及集成电路的一些主要成果和进展, (上)部分包括特邀综述、低压器件、高压硅器件;(下)部分包括集成功率、宽禁带器件与电路等几个方面。
The main research results and advances on power semiconductor devices and integrated circuits presented in 21^st ISPSD09 are summarized. Four aspects involving low voltage and RF, high voltage silicon devices, integrated power and wide band gap devices and circuits are included.
出处
《电力电子》
2009年第4期5-14,共10页
Power Electronics
