摘要
SnO2薄膜是一种应用广泛的宽禁带半导体材料。近几年来,随着对SnO2的光电性质及其在光电器件方面应用的开发研究,SnO2薄膜成为研究热点之一。制备掺杂的p型SnO2是形成同质p-n结以及实现其实际应用的重要途径。近年来,国内外在p型SnO2薄膜研究方面取得了较大的进展。目前报道的p型SnO2薄膜的最高电导率为5.952Ω-1cm-1。并且得到了具有较好非线性伏安特性的铟锡氧化物的透明p-n结。本文就其最新进展进行了综述。
The latest advance of p-type SnO2 transparent conducting oxide thin films, as one of the wide-band semiconductor materials, was reviewed in a thought provoking way. The strengths and weaknesses of a variety of p-type SnO2 film growth techniques,such as spray pyrolysis,rnagnetron sputtering, and sol-gel based chemical route, were tentatively analyzed. Discussion also focused on fabrication of homogeneous p-n junctions by doping of impurities, and its possible applications. The p-type SnO2 film with the highest conductivity of 5.952Ω^-1cm^- 1 has been successfully grown. The high quality p-n junctions made of indium tin oxide （1TO） films with good nonlinear current voltage characteristics were also reported.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2009年第5期531-535,共5页
Chinese Journal of Vacuum Science and Technology
基金
教育部长江学者与创新团队发展计划项目(No.IRT0547)
