摘要
以Ti/Mo为布喇格反射层,在Mo底电极上沉积了高c轴择优取向的AlN薄膜,并采用微机电系统(MEMS)工艺制备了固态封装型体声波谐振器。用原子力显微镜(AFM)、场发射扫描电子显微镜(FESEM)测试了布喇格反射层的粗糙度和截面,用微波探针台和网络分析仪测试了以优化工艺参数条件制备的谐振器(FBAR)的频率特性,得到谐振器的谐振频率为2.51GHz,有效机电耦合系数为3.89%,串并联品质因数为134.2和97.8。
A solidly mounted resonator（SMR）-type film bulk acoustic resonator has been fabricate by using MEMS technology. The Mo/Ti multilayer was adopted as Bragg reflector and AIN film with high c-axis preferential orientation was deposited on the Mo bottom electrode by DC magnetron sputtering. The atom force microscope （AFM） and field emission scanning electron microscope （FESEM） were employed to observe the surface roughness of the Bragg reflector and the cross section of SMR resonator. The frequency response characteristics of the FBAR manufactured by the optimized process parameters were characterized with the HP8720D network analyzer and a G-S-G Pico probe. The results indicated that the electromechanical coupling coefficient of 3.89%, the resonance frequencies of 2.51 GHz, the serial and parallel quality factors of 134.2 and 97.8 were obtained.
出处
《压电与声光》
CSCD
北大核心
2009年第5期613-615,626,共4页
Piezoelectrics & Acoustooptics
基金
武汉市科技公关计划基金资助项目(20061002073)
关键词
布喇格发射层
体声波谐振器
表面粗糙度
Bragg reflector
film bulk acoustic resonator
surface roughness
