摘要
采用射频磁控溅射法在LSCO/Pt/Ti/SiO2/Si(100)衬底上制备了0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5)铁电薄膜。研究了不同的快速退火(RTA)工艺对PSTT5薄膜的结晶性能和铁电性能的影响。实验结果表明,经两步法快速退火,PSTT5薄膜具有完全钙钛矿结构且呈(220)取向。PSTT5薄膜的铁电性能测试结果也表明,采用两步法RTA处理的PSTT5薄膜具有更好的铁电性能,其剩余极化强度(2Pr)可达25.4μC/cm2。
0.95Pb(Sc0.5 Ta0.5 )O3-0.05PbTiO3 (PSTT5) ferroelectrie thin fihns have been prepared by RF magnetron sputtering on LSCO/Pt/Ti/SiO2/Si (100) substrates. The effects of two kinds of rapid thermal annealing (RTA) processes on the properties of PSTT5 were studied. The XRD pattern showed that Two Steps RTA can make PSTT5 thin films form pure perovskite structure and highly (220) oriented. The ferroelectric measurements indicated that the PSTT5 thin films had better ferroelectric property after two steps RTA. The 2Pr can be up to 25.4 μC/cm^2.
出处
《压电与声光》
CAS
CSCD
北大核心
2009年第5期718-720,727,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(60771016)