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两步法快速退火对PSTT5铁电薄膜性能的影响 被引量：2

The Effect of Two Steps RTA on Properties of PSTT5 Thin Films
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摘要 采用射频磁控溅射法在LSCO/Pt/Ti/SiO2/Si(100)衬底上制备了0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5)铁电薄膜。研究了不同的快速退火(RTA)工艺对PSTT5薄膜的结晶性能和铁电性能的影响。实验结果表明,经两步法快速退火,PSTT5薄膜具有完全钙钛矿结构且呈(220)取向。PSTT5薄膜的铁电性能测试结果也表明,采用两步法RTA处理的PSTT5薄膜具有更好的铁电性能,其剩余极化强度(2Pr)可达25.4μC/cm2。 0.95Pb（Sc0.5 Ta0.5 ）O3-0.05PbTiO3 （PSTT5） ferroelectrie thin fihns have been prepared by RF magnetron sputtering on LSCO/Pt/Ti/SiO2/Si （100） substrates. The effects of two kinds of rapid thermal annealing （RTA） processes on the properties of PSTT5 were studied. The XRD pattern showed that Two Steps RTA can make PSTT5 thin films form pure perovskite structure and highly （220） oriented. The ferroelectric measurements indicated that the PSTT5 thin films had better ferroelectric property after two steps RTA. The 2Pr can be up to 25.4 μC/cm^2.
作者 孙宇澄 李雪冬 周圆苑 朱基亮 肖定全 朱建国
机构地区 四川大学材料科学与工程学院 绵阳师范学院物理与电子信息工程系
出处 《压电与声光》 CAS CSCD 北大核心 2009年第5期718-720,727,共4页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(60771016)
关键词 射频磁控溅射 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5) 薄膜 快速退火(RTA) RF magnetron sputtering PSTT5 thin films, RTA
分类号 TN384 [电子电信—物理电子学]
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参考文献8

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同被引文献11

  • 1邓金侠,邢献然.铅基弛豫铁电体陶瓷材料PMNPT制备及研究进展[J].稀有金属,2005,29(1):76-82. 被引量：8
  • 2肖斌,汪家友,苏祥林,杨银堂.BST材料在DRAM电容中的应用研究[J].压电与声光,2005,27(3):287-290. 被引量：6
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压电与声光
2009年 第5期

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