Cu对Fe:In_2O_3稀磁半导体结构和磁性能的影响

Effect of Cu on the Microstructure and Magnetic Property of Fe:In_2O_3 Diluted Magnetic Semiconductor

采用高温固相反应法制备出稀释磁性半导体（In0．9-xFe0.1Cux）2O3（x=0-0．03）。分别用XRD和VSM对样品的结构和性能进行了表征。研究表明：样品在0≤X≤0．01时，均为单相结构且晶格常数随Cu的含量．27的增大而减小；而z〉0．01后，出现杂质相且晶格常数随Cu的含量z的增大而增大。在无Cu掺杂和高掺杂时样品均表现为室温顺磁性，而Cu适量掺杂的样品在室温下具有铁磁性，研究表明室温铁磁性与载流子浓度、3d原子浓度密切相关。

（In0.9-xFe0.1Cux）2O3（x = 0-0.03）diluted magnetic semiconductor （DMS） were prepared by a conventional solid state synthesis technique. The structure and magnetic properties of the samples have been characterized by X-ray diffraction （XRD） and Vibrating sample magnetometer （VSM）. The experimental results show that samples with 0≤x≤0.01 are single phases, and the lattice parameter a decreases with increasing Cu content（x）, but the condition is opposite when 0.01〈 x≤0.03. The samples without Cu and with large Cu content are paramagnetic, but the samples with intermediate Cu doped are found to be ferromagnetic at room temperature （FM）. The results indicate that FM is closely correlated to carrier concentration and 3d atomic concentration.