摘要
用电子陶瓷工艺制备了三种不同掺杂比例的临界热敏电阻CTR(Critical Temperature Resister),根据样品对应的热谱中的相变点,找出Fe2O3掺杂量与相变点的关系。从微观半导体理论分析晶粒体电特性,求解泊松方程,得出晶粒体中电势垒与受主杂质Fe2O3掺杂量的关系。结果表明:当x(Fe2O3)为10%～25%时,相变温度增加值?t和摩尔分数增加值(?x)2呈线性关系。
Three kinds of critical temperature resistor （CTR） with various dopant contents were prepared with the electronic ceramic technology. Based on the DSC thermograms of prepared CTR samples, the relation between the doping amount of Fe2O3 and the phase transition point of CTR was determined. The electrical characteristics of crystal grains contained in prepared CTR were analyzed using the microscopic semiconductor theory. And the relation between the electrical potential barrier and the doping amount of aeceptor impurity Fe2O3 was determined for crystal grains through solving the Poisson＇s equation. The results show that, when the content of Fe203 is in the range of 10wt%-25wt%, the change in the phase transition temperature of CTR, At, is proportional to the square of change in the mole fraction of Fe2O3, （△x）^2.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第10期25-27,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.2005111GZ3B341)
关键词
CTR
P2O5
Fe2O3掺杂量
VO2
相变
Critical Temperature Resistor （CTR）
P2O5
doping amount of FeEO3
VO2
phase change
