摘要
The vertical and lateral interactions in a multisheet array of InAs/GaAs quantum dots are analyzed by finite element method （FEM）. It is shown that due to the effects of vertical interaction, nucleation prefers to happen above buried quantum dots （QDs）. Meanwhile, the effects of lateral interaction adjust the spacing of lateral neighboring QDs. The vertical coupling becomes strong with deceasing GaAs spacer height and increasing number of buried layers, while the lateral coupling becomes strong with increasing InAs wetting layer thickness. The phenomenon that, after successive layers, the spacing and size of QDs islands become progressively more uniform is explained according to the minimum potential energy theory.
The vertical and lateral interactions in a multisheet array of InAs/GaAs quantum dots are analyzed by finite element method （FEM）. It is shown that due to the effects of vertical interaction, nucleation prefers to happen above buried quantum dots （QDs）. Meanwhile, the effects of lateral interaction adjust the spacing of lateral neighboring QDs. The vertical coupling becomes strong with deceasing GaAs spacer height and increasing number of buried layers, while the lateral coupling becomes strong with increasing InAs wetting layer thickness. The phenomenon that, after successive layers, the spacing and size of QDs islands become progressively more uniform is explained according to the minimum potential energy theory.
基金
supported by the National Natural Science Foundation of China(No.10572155 and 10732100)
Guangdong Science and Technology Bureau(No.2006A11001002)
