摘要
采用射频等离子体增强化学气相沉积(RF-PECVD)技术,在125℃的低温条件下,沉积了一系列不同厚度的本征微晶硅(μc-Si)薄膜。对材料的光电特性和结构特性的测试结果表明,低温条件下制备的μc-Si薄膜具有较厚的非晶孵化层,并且纵向结构演变较为明显。采用梯度H稀释技术,在沉积过程中不断降低H稀释度,改善了μc-Si薄膜的纵向均匀性。将此技术应用于非晶硅(a-Si)/μc-Si叠层电池的μc-Si底电池,在聚对苯二甲酸乙二醇酯(PET)塑料衬底上制备出初始效率达到6.0%的a-Si/μc-Si叠层电池。
A series of intrinsic microcrystalline silicon thin films with different thickness are deposited by RF-PECVD at substrate temperature of Ts -- 125 ℃. The measurement results of photo-electrical and structural properties show that the incubation layers of microcrystalline silicon films deposited at low substrate temperature are thicker and inbomogeneous microstructures along the growth direction are obviously observed. The structural unifomaity is promoted by using hydrogen dilution profiling technique with decreasing hydrogen dilution in the gas mixture during the deposition process. Finally, wSi/μc-Si tandem solar cells on flexible PET substrates with an initial efficiency of 6.0 % are obtained by using this technique in the bottom cell.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2009年第6期738-741,共4页
Journal of Optoelectronics·Laser
基金
天津市科技发展计划资助项目(06YFGZGX02100)
