柔性衬底硅薄膜太阳电池中ZGO薄膜的应用

The application of ZnO:Ga thin film to amorphous silicon thin film solar cells on polymer substrate

在室温下,采用孪生对靶直流磁控溅射工艺,在玻璃衬底上制备出高质量的Ga掺杂ZnO(ZnO:Ga)透明导电膜。研究了薄膜厚度对薄膜的结构、光学及电学特性的影响。制备的ZnO:Ga是具有六角纤锌矿结构的多晶薄膜,最佳择优取向为(002)方向。随着薄膜厚度的增加,衍射峰明显增强,晶粒增大。优化反应条件,薄膜的电阻率达到4.69×10-4Ω.cm,在可见光范围内平均透过率达到了85%以上。将不同厚度的ZnO:Ga薄膜(350～820 nm)在柔性聚酰亚胺衬底nip非晶硅(a-Si)薄膜太阳电池中,随厚度的增加,电池的填充因子和效率都得到了提高,得到聚酰亚胺衬底效率7.09%的a-Si薄膜太阳电池。

Ga-doped ZnO（ZnO：Ga）films are deposited on glass substrates by DC magnetron sputtering using facing zinc oxide targets at room temperature and in argon atmosphere. The structural ,electrical and optical properties of the ZnO：Ga films with various thickness are studied in detail. The crystal structure of the ZnO：Ga films is hexagonal wurtzite. The orientation for all the obtained films is along the maxis perpendicular to the substrate. It is observed that with the increase in film thickness,the crystallite sizes of the films are increased. The lowest electrical resistivity among the fihns is about 4.69×10^-4Ω.cm and the average transmittance for all films including substrates is over 85% in the visible range. When the ZnO：Ga thin films with an increase in film thickness（350-820nm） are applied as the window layers of n-i-p thin film solar cells with polyimide substrate,the filed factors（FF） and efficiencies of the cells are increased