摘要
Amorphous gallium nitride （a-GaN） films with thicknesses of 5 and 300 nm are deposited on n-Si （100） substrates by pulsed laser deposition （PLD）, and their field emission （FE） properties are studied. It shows that compared with thicker （300 nm） a-GaN film, better FE performance is obtained on ultrathin （5 nm） a-GaN film with a threshold field of 0.78 V/μm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/μm. These experimental results unambiguously confirm Binh＇s theoretical analysis （Binh et al. Phys Rev Lett, 2000, 85（4）： 864-867） that the FE performance would be prominently enhanced with the coating of an ultra-thin wide band-gap semiconductor film.
Amorphous gallium nitride （a-GaN） films with thicknesses of 5 and 300 nm are deposited on n-Si （100） substrates by pulsed laser deposition （PLD）, and their field emission （FE） properties are studied. It shows that compared with thicker （300 nm） a-GaN film, better FE performance is obtained on ultrathin （5 nm） a-GaN film with a threshold field of 0.78 V/μm, which is the lowest value ever reported. Furthermore, the current density reaches 42 mA/cm2 when the applied field is 3.72 V/μm. These experimental results unambiguously confirm Binh＇s theoretical analysis （Binh et al. Phys Rev Lett, 2000, 85（4）： 864-867） that the FE performance would be prominently enhanced with the coating of an ultra-thin wide band-gap semiconductor film.
基金
Supported by the National Natural Science Foundation of China (Grant No. 10604001)
the Beijing Nora Program (Grant No. 2008B10)
