纳米AZO膜的制备及其光电性能

Preparation and photoelectric properties of nano-AZO film

为开发光电纳米结构功能纺织品,采用磁控溅射技术在丙纶非织造布上制备掺铝氧化锌(AZO)薄膜,并对AZO膜进行原子力显微镜(AFM)表征,分析不同工艺参数对AZO薄膜结构以及AZO的导电性能和抗紫外线性能的影响。结果表明:颗粒直径随着压强增大而增大,当压强增大到一定程度后,颗粒直径逐渐变小;颗粒直径随着功率增加而增大,但继续增加,薄膜的均匀性将变差,表面变得粗糙,但导电性能提高;溅射时间的延长能改善薄膜的均匀性和致密性。在溅射压强为0.5 Pa,溅射功率为120 W,溅射时间为60 min时,AZO薄膜的均匀性和致密性最好,制备的AZO薄膜具有优良导电性能,同时对紫外线的吸收能力较好。

In order to develop the nanostructure functional textile with photoelectricity, AZO thin film has been deposited on the polypropylene non-woven fabric by magnetron sputtering, and characterized by atomic force microscope （AFM）. The influences of different process parameters on AZO thin film structure have been analyzed. In addition, the electrical conductivity and anti-UV of AZO thin film have been studied. The results show that the diameter of AZO particles increases with the increase of gas pressure, and then becomes smaller gradually when the pressure continues to increase to a certain extent. With the increase of sputtering power, the diameter of AZO particles increases, but the uniformity of the thin film begins to deteriorate and the surface becomes rough when the power continues to increase, while the conductivity of the film gets better and better. Prolonging the sputtering time improves the uniformity and compactness of the thin film. When the sputtering pressure, power and time are 0.5 Pa, 120 W and 60 min, respectively, the uniformity and compactness of the film is the best. Meanwhile, the film has good conductivity and absorption capacity of UV radiation.