低阈值基横模条形半导体激光器

Stripe Semiconductor Lasers with Low--Threshold Current and Fundamental Transverse Mode

本文利用等效折射率法对条形半导体激光器进行分析,得到确定条形激光器结构参数的公式,并对我们所研究的AlGaAs/GaAs BH激光器进行优化设计,得出最佳结构参数,最后给出实验测试结果,与设计要求相符。

By using effective index method, stripe Lasers are analysed and the formulas deter-ming their structural parameters are given. The optimum structural parameters of AlGaAs/GaAs BH Lasers are obtained by numerical analysis. Finally we present the experimentalresults, which are in agreement with design.