n型金属氧化物半导体场效应晶体管噪声非高斯性研究

Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor

基于n型金属氧化物半导体场效应晶体管(nMOSFET)噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨.

On the basis of the number fluctuation model of n-type metal oxide semiconductor field effect transistor（nMOSFET）,non-Gaussianity of noise in nMOSFET was studied by the quadratic sum of the bicoherence,which belongs to higher order statistics.Comparing nMOSFET s test noise with Monte Carlo simulative noise,we proved that there is non-Gaussianity in nMOSFT s noise,that the noise s non-Gaussian degree in small size devices is stronger than that in large size devices,and that the non-Gaussian degree of nMOSFF＇s noise in strong inversion and linear regime increase with the drain-source voltage. The physical mechanism of nMOSFET noise is discussed from Monte Carlo simulation and the central limit theorem.