p种子层对单室制备微晶硅电池性能的影响

Effects of p-seeding layer on the performance of microcrystalline silicon solar cells deposited in single chamber

采用单室等离子体化学气相沉积技术沉积pin微晶硅电池时,硼污染降低了本征材料的晶化率并影响了p/i界面特性.针对该问题文中采用p种子层技术,即在沉积p层后采取高的H2/SiH4比率及适当的功率又沉积一个薄的p层,初步研究了p种子层对微晶硅i层纵向均匀性及电池性能的影响.实验结果表明:采用此方法能改善p/i界面特性,提高本征材料纵向结构的均匀性并降低硼对本征层的污染,有效地提高单结微晶硅电池的性能.最后,通过优化沉积条件,制备得到光电转换效率为8.81%(1cm2)的非晶/微晶硅叠层电池.

The p-i-n type μc-Si：H solar cells were prepared in a single chamber using very high frequency plasma enhanced chemical vapor deposition technique.Boron cross-contamination between p-layer and subsequent i-layer seriously affects the device performance.The effects of p-seeding on the μc-Si：H i-layers and performance of μc-Si：H solar cells were investigated.The p-seeding method was mainly realized by relatively high hydrogen rich plasma.It has been demonstrated that p-seeding can improve the characteristics of p/i interface and the vertical uniformity of the intrinsic layer and reduce boron contamination. Through the optimization of p-seeding layer technique, a-Si： H/μc-Si： H tandem solar cell with 8.81% （1 cm2） conversion efficiency has been fabricated in single chamber.