摘要
研究了不同偏置条件下半导体激光器的微分输出功率与端面反射率的关系,为主动法控制半导体光放大器端面减反射膜的镀制提供了必要的使用判据。镀膜实验证实了理论预测,使用本判据有助于提高镀膜的可靠性。
Studies have been made on the relationship between the differentia1 output and the re-felectivity of semiconductor lasers biased at different levels, and criterions have been esta-blished for the preparation of AR coatings on-the diode facets via the actiye monitoring me-thod. The coating experiments confirmed the theoretical predictions and the criterions havebeen used to greatly improve the reliability of the coating experimenst.
出处
《量子电子学》
CAS
CSCD
1990年第4期271-276,共6页
基金
国家教委博士点基金
自然科学基金~~
关键词
半导体激光器
减反射膜
镀制
Semiconductor laser
active monitoring method
antireflection coatings