摘要
We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340nm and 1000nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77K.
We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate. The quantum dots have a bimodal size distribution with an emission wavelength of around 1340nm and 1000nm, respectively. We observe the photoluminescence of the singly charged exciton in the modulation doped quantum dots in 77K.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60625405 and 10734060, and the National Basic Research Program of China under Grant No 2006CB921504.
