In(Ga)As量子点红外探测器

In(Ga)As Quantum-Dot Infrared Photodetectors

讨论了量子点红外探测器的工作原理、性能参数、暗电流形成机理及其优势,介绍了In(Ga)As量子点红外探测器的主要结构、性能和取得的最新结果,最后探讨了如何进一步提高量子点红外探测器的性能。指出要实现量子点红外探测器的优势,必须优化量子点生长条件,让量子点更小、更均匀和密度更大;必须提高量子点的掺杂控制和掺杂水平,实现每个量子点中有1～2个电子;必须降低量子点生长中引入的应力,增加量子点有源区的层数;此外,还必须寻求新的量子点红外探测器结构。

The operation principle, characteristic parameters, dark current mechanism and potential advantages of quantum dot infrared photodetectors （QDIPs） are discussed. Then the main structures, performances and latest results of In （Ga）As QDIPs from literatures are introduced. Finally, how to improve the performances of QDIPs are proposed. To achieve the anticipated advantages of QDIPs, it is necessary to optimize quantum-dots （QDs） growth condi- tions to make the dots smaller, more uniform and denser, and improve QDs doping controls and doping levels to get 1 - 2 electrons in one QD. It is also needed to reduce the induced stress in the QDs growth, increase the layer number of the QDs active region, and seek new QDIPs structures.