大功率半导体激光器的腔面钝化

Facet Passivation of High Power Semiconductor Lasers

大功率半导体激光器的腔面退化是影响其寿命和可靠性的重要因素,长期以来一直是人们关注和研究的重点。本文利用离子铣结合腔面钝化还原层的方法对大功率半导体激光器的腔面进行处理。结果显示,离子铣腔面钝化能够在一定程度上减少半导体激光器的功率退化,168h加速老化后退化幅度降低4.5%;同时该技术对老化过程中COD阈值降低有明显的抑制作用,可有效减少使用中的突然失效。结果表明,该技术能够改善半导体激光器的腔面特性,器件的可靠性和使用寿命可望得到提高。

Reliability and lifetime of high power semiconductor lasers are significantly affected by facet degradation. The ion bombardment and evaporation of the passivation layer were implemented to the facet of semiconductor lasers. The burn-in and conventional L-I-V as well as catastrophic optical damage （COD） test were carried out on the treated samples. The results show that the power degradation characteristic was improved by the facet passivation. Magnitude of power degradation after 168 h accelerates the burn-in test decreased for 4.5%. Suppression of COD threshold decrease was observed, and sudden failure was expected to be reduced. The results indicate that the device reliability can be improved.