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FIB的工作原理及其应用 被引量:3

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摘要 介绍了聚焦离子束显微镜的基本功能及工作原理,分析了影响离子束显微镜影像的因素。详细介绍了气体在聚焦离子束系统中的作用,对刻蚀气体与沉积气体种类进行了介绍,刻蚀气体可对不同的材料进行选择性刻蚀,而沉积气体可以沉积金属或介质,以进行电路的修改。
出处 《电子产品可靠性与环境试验》 2009年第B10期4-10,共7页 Electronic Product Reliability and Environmental Testing
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参考文献6

  • 1张继成,唐永建,吴卫东.聚焦离子束系统在微米/纳米加工技术中的应用[J].材料导报,2006,20(F11):40-43. 被引量:11
  • 2Mair G L R. Electrohydrodynamic instabilities and the energy spread of ions drawn from liquid metals.J Phys. D: Appl Phys, 1996, 29:2186-2192.
  • 3K.N.Hooghn, K.S.Wills, P.A.Rodriguez,etc.Integrated Circuit Device Repair Using FIB Syetem:Tips, Tricks, and Strategies.ISTFA proceedings, 1999, pp:247-254.
  • 4Neil J Bassom, Tung Mai.Modehng and Optimizing XeF2-enhanced FIB Milling of Silicon.ISTFA proceedings, 1999, pp:255-261.
  • 5Ann N.CampbeU, PaiboonTangyunyong, Jeffrey R.jessing, etc.Focused Ion Beam Induced Effects on MOS Transistor Parameters. ISTFA proceedings, 1999, pp:247-254.
  • 6章壮.聚焦离子束原理及其工业应用[J].内江科技,2008,29(1):119-120. 被引量:2

二级参考文献26

  • 1Fu Yongqi,Ngoi Kok,Ann Bryan.Microfabrication of microlens array by focused ion beam technology[J].Microelectronic Eng,2000,54:211
  • 2Kim G M,van den Boogaart M A F,Brugger J.Fabrication and application of a full wafer size micro/nanostencil for multiple length-scale surface patterning[J].Microelectronic Eng,2003,67-68:609
  • 3Kirch S J,Tomasi D J.Advanced micromachining techniques for failure analysis.Proc 17th International Symposium for Testing and Failure Analysis (ISTFA 91),(ASM International,Materials Park,Ohio),1991.35
  • 4Pantel R,Auvert G,Mascarin G,et al.Advanced CMOS Silicon Technology Analysis Using Focused Ion Beam Etching and Transmission Electron Microscopy Observation.Proceedings 13th Int Conf Electron Microscopy (ICEM13),1994.1007
  • 5Steve Reyntjens,Robert Puers.A review of focused ion beam applications in microsystem technology[J].J Micromech Microeng,2001,11:287
  • 6Kaplan W D,Oviedo R,Kissinger K,et al.Automatic TEM Preparation.Proc.25th International Symposium for Testing and Failure Analysis (ISTFA 99),(ASM International,Materials Park,Ohio),1999.103
  • 7Ohnishi T,Koike H,Ishitani T,et al.A New Focused-Ion-Beam Microsampling Technique for TEM Observation of Site-Specific Area's.Proc 25th International Symposium for Testing and Failure Analysis (ISTFA 99),(ASM International,Materials Park,Ohio),1999.449
  • 8Dai J Y,Tee S F,Tay C L,et al.Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact[J].Microelectronics J,2001,32:221
  • 9Timothy M Miller,Hui Fang,et al.Fabrication of a micro-scale,indium-tin-oxide thin film strain-sensor by pulsed laser deposition and focused ion beam machining[J].Sensors and Actuators,2003,A 104:162
  • 10Bassom N J,Mai T.Modelling and Optimizing XeF2-enhanced FIB Milling of Silicon.Proc 25th International Symposium for Testing and Failure Analysis (ISTFA 99),(ASM International,Materials Park,Ohio),1999.255

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