表面覆盖氮化硼膜的金刚石膜的场发射特性(英文)

Field Emission Characteristics from BN-coated Diamond Films

利用热丝化学气相沉积(HFCVD)方法在Si衬底上生长了4μm厚的金刚石膜,然后利用射频磁控溅射方法在金刚石膜上沉积了100 nm厚的六角氮化硼(h-BN)薄膜.在超高真空系统中测试了覆盖氮化硼(BN)薄膜前后金刚石膜的场发射特性,结果表明覆盖BN薄膜后的金刚石膜的场发射特性明显提高,开启电场由14 V/μm上升到8 V/μm.F-N曲线表明,覆盖BN薄膜后的金刚石膜在强电场区域的场增强因子有所降低,这可能归因于场发射点随着电场的增强而改变.

4μm diamond films were deposited on Si by hot filament chemical vapor deposition（HFCVD）, then a 100 nm hexangular boron nitride（h-BN） thin films were prepared on diamond films by RF magnetron sputtering physical vapor deposition. The field emission characteristics of diamond films were tested in an ultrahigh vacuum system（〈10^-7 Pa）. The field emission characteristics of the diamond films coated with the h-BN thin films were improved clearly, and the threshold field decreased from 14 V/μm to 8 V/μm, The Fowler-Nordheim （F-N） plots showed that the field enhancement factor decreased in the high electric field region, it could be attributed to the change of field emission sites.