摘要
提出一种基于耗尽型晶体管与增强型晶体管串联产生基准电源的无运算放大器结构电路。通过将两个基准电源电路级联,可以获得较好的电源抑制比特性,并保持较小的电压功耗。TT模型下的仿真结果表明,基准电源的电源抑制比(PRSS)在1 MHz下,低于-100 dB,-40^+125℃范围内的温度系数为13.7 ppm/℃,静态电流小于1μA。
An op amp-less voltage reference based on depletion mode transistor series with enhancement mode transistor is presented.The simple circuit topology achieves very high Power Supply Rejection Ratio（PSRR） by cascading of the two reference cells while maintains very low power dissipation.Simulation results under TT model show that the PSRR is below-100 dB at 1 MHz,the temperature coefficient is 13.7 ppm from-40 ℃ to ＋125 ℃ and the quiescent current is less than 1 μA.
出处
《现代电子技术》
2009年第18期1-2,9,共3页
Modern Electronics Technique
基金
湖北省教育厅重点科研项目资助项目(D20081002030-096105)
关键词
高电源抑制比
低功耗
基准电路
温度系数
high PSRR
low-power consumption
voltage reference
temperature coefficient
