摘要
采用循环伏安法,在1 mol/L的KOH溶液中控制电位-1 000 mV^-450 mV(vs SEC)之间以1 mV/s的速度扫描,在铜片基体上生成Cu2O薄膜。采用阴极电沉积法,以0.1 mol/L的CH3COONa和0.02 mol/L的(CH3COO)2Cu溶液作为电解液,控制恒电位-245 mV(vs SEC)、室温条件下电沉积2 h^3 h在石墨板上制得Cu2O薄膜。分别用两种方法制得的薄膜催化剂对甲基橙溶液进行了光催化及光电催化降解。实验表明:铜片基体上膜的降解效果稍好于石墨基体上的膜;当加偏压后,偏压越大降解率越高。在反应器中,两种不同基体制备的薄膜,其光电催化降解甲基橙的降解率均可达70%.
Tbe Cu2O films are formed on copper sheet by sweeping the potential from -1 000 mV to -450 mV versus SCE in 1moL/L KOH solutions. At the condition of constant potential -245 mV versua a SEC ,a Cu2O thin film was also electrodeposited on graphite sheet in the solution of 0.1 mol/L CH3COONa and 0.02 mol/L( CH3COO)2 Cu. The photocatalytic degradation of methyl orange (MO) was perfrmed by two kinds of cuprous oxide films and their degradation performance was compared. The experimental results showed that the MO removal rate of Cu2O films made by cyclic voltammetry was highre than that Cu2O films deposited on graphite. The removal rate of MO can reach 70% in container and the removal rate of MO becomes greater with the increasing of the bias voltage.
出处
《太原科技大学学报》
2009年第5期432-436,共5页
Journal of Taiyuan University of Science and Technology
关键词
循环伏安法
阴极沉积法
CU2O
光催化
制备
降解
cyclic voltammetry, cathodic deposition, cuprous oxide, photocatalytic, degradation