单室沉积本征微晶硅薄膜及其在电池中的应用

Single-chamber deposition of intrinsic microcrystalline silicon thin film and its application in solar cells

为获得单室沉积高效微晶硅(μc-Si)太阳电池,首先采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同沉积条件下的本征μc-Si薄膜。通过对材料的结构和电学输运特性的研究,借鉴分室沉积的器件质量级μc-Si材料的经验,选取合适的本征层和p种子层处理B污染的技术,在单室中制备出光电转换效率为6.23%(1cm2)的单结μc-Si电池。

To obtain high efficiency microcrystalline silicon solar cell in single chamber, a series of intrinsic microcrystalline silicon thin films were prepared by very high frequency plasma enhanced chemical vapor deposition（VHF-PECVD） at different deposition conditions. The structural and electrical properties of these films were researched. Based on the experience of device grade intrinsic microcrystalline silicon used in multi-chamber,through the choice of suitable intrinsic layer and p seeding layer technique, the single junction microcrystalline silicon solar cell with 6.23 % （1 cm^2 ） conversion efficiency has been fab- ricated in single chamber.