Φ125mm直拉硅单晶氧径向均匀性研究

Study on Radial Oxygen Uniformity of Φ 125 mm Cz Si Crystal

为控制氧径向均匀性，选择Φ３５０ｍｍ热场。增加晶转速度可以改善氧径向均匀性，但石英坩埚转速对氧径向均匀性没有明显影响。

The radial oxygen uniformity of Φ 125 mm Cz Si single crystal was investigated. The optimum proces is Growth from Φ 300 mm hot zone. The crystal rotation is related with the radial uniformity whereas the crucible rotation is ineffective.