高纯钛制备过程中杂质Si的行为分析

The Study of Si Behavior in Titanium Purification

对卤化法制备高纯钛过程中杂质Si的行为进行了热力学分析。在实验控制的条件下,杂质Si在卤化源区可以生成SiI2和SiI4,以SiI4的形式在沉积区分解,从而进入高纯钛中。通过分析得出了抑制SiI4生成的温度控制范围。实验发现,在控制卤化源区温度773.15-973.15 K,沉积区温度1373.15-1473.15 K的条件下,可以较好地抑制Si的污染。

The disquisition for the thermodynamic action of Si in the process of purifying Titanium was made. Si impurity in the halide source area can generate SiI2 and SiI4, then in the form of SiI4 decomposes in the deposition area to enter the high-titanium. The optimal temperature control ranges are obtained. The temperature of source area and deposition area should be controlled respectively in 773.15 -973.15K and 1373.15 - 1473.15K. In these temperature ranges, Si qua impurity polluting high purity Titanium by the way of the decomposition of Si iodides can be avoided.