一种高线性GaAs pHEMT宽带低噪声放大器的设计

Highly linear wideband low noise amplifier based on GaAs pHEMT

针对互补金属氧化物半导体工艺在高频时性能差的缺点,基于砷化镓赝配高电子迁移率晶体管器件,设计了一种用于无线通信系统的宽带低噪声放大器,宽带低噪声放大器的设计采用负反馈来获得平坦的增益和较低的输入输出反射系数。电路版图设计好后利用Advanced Design System 2005进行仿真。仿真结果表明,该放大器在0.3~2.2 GHz频带内,增益高于12 dB,且变化小于3 dB;噪声系数在1.04~1.43 dB之间,输入输出反射系数均小于-10 dB,群延时特性在整个频带内接近线性,且在整个频带内无条件稳定,所设计的宽带低噪声放大器能够很好地满足实际需要。

For the disadvantages of the complementary metal oxide semiconductor （CMOS） technology under high frequency, a wideband low noise amplifier （WLNA） for wireless telecommunication systems is designed based on gallium arsenide pseudo high electron mobility transistor （GaAs pHEMT）. Negative feedback is used to design the WLNA to obtain smooth gain, low input and output reflection coefficient. Simulations were conducted with Advanced Design System 2005 for the designed circuit. Simulation results show that, in the band of 0.3-2.2 GHz, the gain of this WLNA is below 12 dB and fluctuation of gain is under 3 dB, while for the noise figure being between 1.04 dB and 1.43 dB, the input and output reflection coefficients are both below --10 dB, and the group delay in the whole band is close to linearity and this WLNA is unconditionally stable. This WLNA can well meet actual demands.