聚酰亚胺薄膜的离子束改性及低温导电特性研究

Modified Polyimide Films Injected with High Energy Ion

在室温下用3MeV的硅离子对聚酰亚胺(PI)薄膜进行注入,注入离子浓度为1×1012～1×1015ions/cm2。对注入后的样品进行了拉曼光谱和电学性质的测试。拉曼分析表明:随注入量的增大,PI薄膜的结构有从绝缘体→类金刚石→石墨这样一个逐渐碳化的变化过程,即样品中的苯环,-CH3-等官能团减少,说明样品随注入量的增大逐渐碳化;电学性质测量表明,随着注入量的增大,样品的电阻逐渐下降。分析认为离子注入使聚合物碳化是引起聚合物电学性质发生改变的重要原因。

Abstract： Polymide （PI） films were irradiated by 3 MeV silicon ions at room temperature, the ions fluences ranging is from 1 ×10^12 to 1 ×10^15 ions/cm^2. The samples were measured by Raman spectra and electrical characteristic. According to the analysis of Raman spectra, structures of PI films have a carbonized trend that is insulator→ diamond-like carbon→graphite, it indicates that those functional groups such as benzene ring and -CH3- decreased with theincreasing of implantation dose. The electrical measurement results indicated that the electric resistance decreased with the increasing of implantation dose. Carbonization is the prime reason that cause the electric resistance changed.