摘要
An AIGaN-based back-illuminated ultraviolet p-i-n detector is designed and its performance is analysed both simulately and experimentally. The width of p- and i-regions has been optimized to the best theoretic values. It is indicated that the changing of responsivity with increase of bias can not be attributed to the expansion of depletion layer as it is believed, but to two reasons： 1） the effect of GaN/AlGaN heterojunction barrier to block the electrons decreases with higher bias and 2） the recombination rate of excess carriers decreases due to the building up of an electric field in depletion region. At zero bias, the simulated responsivity reaches its maximum of 0.12 A/W with quantum efficiency of 55.1%. The measured peak responsivity is more than 0.09 A/W with quantum efficiency greater than 41.6%. The experimental data are almost consistent with the results of the simulation.
An AIGaN-based back-illuminated ultraviolet p-i-n detector is designed and its performance is analysed both simulately and experimentally. The width of p- and i-regions has been optimized to the best theoretic values. It is indicated that the changing of responsivity with increase of bias can not be attributed to the expansion of depletion layer as it is believed, but to two reasons： 1） the effect of GaN/AlGaN heterojunction barrier to block the electrons decreases with higher bias and 2） the recombination rate of excess carriers decreases due to the building up of an electric field in depletion region. At zero bias, the simulated responsivity reaches its maximum of 0.12 A/W with quantum efficiency of 55.1%. The measured peak responsivity is more than 0.09 A/W with quantum efficiency greater than 41.6%. The experimental data are almost consistent with the results of the simulation.
