摘要
GaN基发光二极管(LED)作为目前固态照明和显示等应用中最核心的器件,在完全发挥材料性能的道路上还存在着一些困难。针对蓝光LED内量子效率低和白光LED应用中缺乏简易制备方法的现状,本研究组做出了有意义的富有创新性的工作:提出的宽窄耦合量子阱结构的LED使得蓝光LED的内量子效率得到了很大的提高;通过生长一个用于调节量子阱中的应变和局域化的InGaN插入层,制备出了同一发光层出射白光的单芯片白光LED。
Presently GaN-based light-emitting diodes （LEDs） are the most important devices in application of solid-state lighting and display; however, there are still some difficulties in fully developing their potentials. We have made significant and creative contributions to altering the reality that the internal quantum efficiency of blue LEDs is fairly low and there are no simple and effective methods to fabricate white LEDs,. Blue LED with coupled wide and narrow quantum wells is designed, which is proved to have greatly elevated the internal quantum efficiency. By inserting an InGaN underlying layer, the strain state and localization effect of the quantum wells is modulated, and consequently a single-chip white LED, which emits white light in the same active layer, is obtained.
出处
《中国材料进展》
CAS
CSCD
2009年第7期16-19,共4页
Materials China
关键词
发光二极管
氮化镓
晶体生长
light-emitting diodes
gallium nitride
crystal growth
