锗衬底上反应离子刻蚀制备宽波段红外增透结构的工艺及性能研究

Investigation on Technics and Property of Broadband Infrared Antireflective Sub-wavelength Structures Prepared by RIE on Ge Substrate

研究了利用反应离子刻蚀技术在Ge衬底上制备宽波段抗反射亚波长结构时工艺参数对刻蚀速率及刻蚀选择比的影响。利用场发射扫描电镜（SEM）及原子力显微镜（AFM）对刻蚀图形的表面形貌进行了观察。利用傅里叶变换红外光谱仪对其红外透过率进行了研究。结果表明：所制备亚波长结构整齐、规则；在8～12μm波段增透8％左右，起到良好的宽波段红外抗反射效果。

The influence of the parameters on etching rate and selectivity-ratio during the reactive ion etching （RIE） process through which broadband sub-wavelength structures（SWS） were prepared on Ge substrate was investigated. Surface topography of the etched patterns was observed using field-emission scanning electron microscope（SEM） and atomic force microscope （AFM）. Infrared transmittance property of the sub-wavelength structures was tested by Fourier transform infrared spectroscope. Results show that the etched patterns were of high uniformity and fidelity. The SWS exhibited a good broadband antireflective performance with the increase of the average transmittance over 8μm - 12μm up to 8%.