摘要
高Q值的片上集成电感是单片集成射频电路、微波电路中不可缺少的重要元件。并联形式的集成电感具有较高的品质因数,但是其自谐振频率较低,使其应用范围受到限制。该文从衬底损耗、金属损耗及邻近效应出发,首次提出了一种提高并联集成电感性能的方法。合理的设计多个不同圈数、层数的电感并将其并联,用ASITIC软件近似仿真发现该型并联集成电感能够在较高频段获得较高Q值。
High-Q spiral On-Chip Integrated inductors are indispensable and important components in RF and microwave fields.Parallel connected spiral inductors have the advantage of quality factors.But this kind of spiral inductor has lower self-resonance frequency,and the range of application is limited.The paper initiates a method for improving capability of parallel connected spiral inductor based on substrate loss、metal loss and proximity effects.It properly designs multi-spiral inductors which have different turns and levels, and join multiple spirals in shunt. The result shows that this kind of parallel connected spiral inductor can gain higher quality factor on higher frequency by ASITIC simulator.
出处
《衡阳师范学院学报》
2009年第3期37-40,共4页
Journal of Hengyang Normal University
基金
衡阳市科学技术局科技计划资助项目(2007KJ036)
关键词
并联集成电感
品质因子
衬底损耗
金属损耗
邻近效应
parallel connected spiral inductor
quality factor
substrate loss
metal loss
proximity effects
