金刚石高成核选择比图形化技术

A TECHNOLOGY FOR PATTERNING DIAMOND BY HIGH NUCLEATION SELECTIVITY

报道了一种新的金刚石薄膜选择生长图形化技术。首先用直流偏压增强的微波等离子体化学气相沉积（ＭＰＣＶＤ）对图形区域（Ｓｉ）高密度金刚石成核，接着对掩模区域（ＳｉＯ２）进行一次化学浅腐蚀，然后正常生长金刚石薄膜，得到表面光滑、侧壁陡直的金刚石精细图形。用该技术制作了金刚石微马达结构，其厚度为２μｍ，转子直径１５０μｍ。图形间隙可控制至１－２μｍ。

A new technology for selective growth of diamond films is reported. Polycrystalline diamond thin films have been selectively grown on mirror polished silicon substrate using DC bias enhanced microwave plasma chemical vapor deposition(MPCVD) to increase diamond nucleation density. Shallow etching of the SiO 2 mask was employed after the nucleation treatment to remove the diamond nuclei from the mask. The conventional process for the growth of diamond films was then carried out. At last, perfect diamond patterns with smooth surfaces and sharp boundaries were obtained. Diamond film micromotors with 150μm in rotor diameter and 2.0μm in thickness were fabricated. The gaps between diamond patterns could be controlled to l to 2μm by the technology described above.