摘要
本文概述了场效应管的分类和设计。设计按常规程序考虑,特殊的MOS管还要考虑相关许多其它因素,以及理论与实践结合后的取舍。
This article Summarizes the distinguish and layout of the Field-Effect-Transistor. Layout depends on the conventional proceeding. For the specific MOSFET, we also think about a number of other factors. In relation to the selection after according to the conjuncture of theory and practice.
出处
《山东电子》
1998年第4期28-29,共2页
Shandong Electronics