摘要
在使用无掩模腐蚀制作硅微机械结构时,其结构凸角的削角特性有别于常规有掩模腐蚀时的情况.本文通过分析和实验,研究了该情况下凸角削角尺寸的变化规律和特点,并给出了对其进行补偿的原则和方法.
Thc Charactristics of maskless-etched convex-corner undercutting is differentfrom that formed by conventional masked etching. In this paper the principles of the mask-less-etched undercutting are investigated by using both analyses and experiments. Theregularities and the practical methods of the compensation for the maskless-etched under-cutting are provided.
出处
《传感技术学报》
CAS
CSCD
1998年第3期1-6,共6页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金
中科院传感技术国家重点实验室
"九五"科技攻关等项目的资助
关键词
硅
各向异性腐蚀
削角补偿
微机械结构
silicon anisotropic etching potassium hydroxide compensation forcorner-undercutting micromachining structure