InSb阵列探测芯片的感应耦合等离子反应刻蚀研究

Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays

利用感应耦合等离子（ICP）反应刻蚀（RIE）进行了InSb阵列芯片台面刻蚀,并利用轮廓仪、SEM及XRD对台面形貌以及刻蚀损伤进行分析。采用优化的ICP刻蚀参数,实现的刻蚀速率为70-90 nm/min,刻蚀台阶垂直度-80°,刻蚀表面平整光滑、损伤低。与常规的湿法腐蚀相比,明显降低了侧向钻蚀。台面采用此反应刻蚀工艺,制备了具有理想I-V特性的320×256 InSb探测阵列芯片,在-500 mV到零偏压范围内,光敏元（面积23μm×23μm）的动态阻抗（Rd）大于100 MΩ。

This work presents the study resuhs of using inductively coupled plasma （ICP）-reactive ion etching （RIE） for fabricating InSb mesa with CH4/H2/Ar plasma. With optimized ICP etching parameters, good etching results have been obtained. Etch rates is about 70 to 90 nanometers per minute, sidewall angles of etched mesa is about 80°, and the etched surface is as smooth as that before the RIE process and with low damage. The lateral etching effect commonly encountered in wet etching has been reduced distinctly. 320 × 256 InSb detective array with the mesa fabricated with the ICP-RIE have been developed also. The current-voltage characteristic of this detector measured at 77 K is as good as that of the devices fabricated by wet etching.