磁控溅射AlN介质MIS栅结构的AlGaN/GaN HEMT

AlGaN/GaN MIS-HEMT with Magnetron Sputtered AlN

报道了一种X波段输出功率密度达10.4W/mm的SiC衬底AlGaN/GaN MIS-HEMT。器件研制中采用了MIS结构、凹槽栅以及场板,其中MIS结构中采用了磁控溅射的AlN介质作为绝缘层。采用MIS结构后,器件击穿电压由80V提高到了180V以上,保证了器件能够实现更高的工作电压。在8GHz、55V的工作电压下,研制的1mm栅宽AlGaN/GaN MIS-HEMT输出功率达到了10.4W,此时器件的功率增益和功率附加效率分别达到了6.56dB和39.2%。

An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor（MIS-HEMT）on SiC substrate with 10.4 W/mm power density at X band is reported.MIS configuration using magnetron sputtered AlN as insulator,gate recessing and field plate was applied to device fabrication.By imploying this structure the breakdown voltage of the device was improved from 80 V to over 180 V,leading to an improvement in operating voltage.At 8 GHz and 55 V operating voltage,the fabricated 1 mm gate width AlGaN/GaN MIS-HEMT exhibited an output power of 10. 4 W with 6.56 dB power gain and 39.2% power added efficiency.