期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种提高GaAs HBT放大器增益带宽积的技术 被引量：1

An Approach to Enhance the Gain-bandwidth Product of a GaAs HBT Cascode Broadband Amplifier
下载PDF
导出
摘要 提出了一种提高GaAsHBT共射共基宽带放大器增益带宽积的技术,给出了一种宽带补偿的改进型共射共基宽带增益单元。小信号分析表明:在相同半导体工艺条件下,基于这种改进型电路结构的放大器具有更高的增益带宽积。采用2μmInGaP/GaAsHBT晶体管工艺,分别设计了无高频损耗补偿和具有高频损耗补偿电路的共射共基放大器,并成功流片,在同样测试条件下,新的增益单元其增益带宽积达到了原来的近400%。 In this paper,we report a new design methodology and discuss the performance of a cascode amplifier with series RLC peaking circuit,which enhances the gain-bandwidth product of the cascode amplifier.Small signal analysis shows：the broadband amplifier constructed by this proposed circuit topology has higher gain-bandwidth product.Two cascode amplifiers,one is the conventional cascode amplifier and the other with RLC peaking circuit,are designed and fabricated based on 2 μm InGaP/GaAs HBT technology.The measurement results show that the gainbandwidth product of the amplifier with RLC peaking circuit is increased by a factor of around four.
作者 李杰 胡善文 张晓东 高怀
机构地区 东南大学国家ASIC系统工程技术研究中心 苏州远创达科技有限公司
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2009年第3期360-363,共4页 Research & Progress of SSE
关键词 宽带放大器 补偿 增益单元 共射共基放大器 broadband amplifier loss compensation gain cell cascode amplifier
分类号 TN72 [电子电信—电路与系统]
  • 相关文献

参考文献8

  • 1Gray P R, Hurst P J, Lewis S H,et al. Analysis and Design of Analog Integrated Circuits[M]. 4th edition. New York: Wiley, 2001.
  • 2Gamand P, Deswarte A, Wolny M, et al. 2 to 42 GHz fiat gain monolithic HEMT distributed amplifiers [C]. IEEE GaAs IC Symp Tech Dig, 1988 :109-111.
  • 3Shigematsu M, Sato M, Suzuki T, et al. A 49 GHz preamplifier with a transimpedance gain of 52 dB using InP HEMTs [J]. IEEE J Solid-state Circuits, 2001,36 (9) :1309-1313.
  • 4Gao Huai, Chatchaikarn A, Yang L W, et al. A new traveling wave matching structure for enhancing the bandwidth of MMIC broadband amplifier[C]. IEEE Microwave and Wireless Components Letter, 2005,15 (8) : 508-509.
  • 5Gao H, Chatehaikarn A, Li G P,et al. A novel design technique for bandwidth enhancement in InGaP HBT broadband amplifier[C]. IEEE TENCON 2004, 2004, 3: 632-634.
  • 6Chatchaikarn A, Yau W, Li G P,et al. Optimizing InGaP/GaAs HBT technology for distributed amplifier applications [C]. CS MANTECH Conference, British Columbia, Canada, 2006.
  • 7Chatchaikarn A, Chen Y C, Yang D, et al. HBT matrix amplifier with Gain-Cell enhancing gain and bandwidth ['C]. IEE Electronics Letters, 2006,42 (1) : 22- 24.
  • 8Chatchaikarn A, Chen Y C, Yang D, et al. A 2 μm InGaP/GaAs HBT matrix amplifier with 15 dB gain and 41 GHz bandwidth[C]. IEEE Compound Semiconductor Integrated Circuit Symposium,2005 : 83-85.

同被引文献4

  • 1Chang C and Chuang H.0.18 tun 3-6 GHz CMOS Broadband LNA for UWB Radio[J].Electronics Letters,2005,41(12):33-34.
  • 2Kimura S,Imai Y,Umeda Y and Enoki T.A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique[J].GaAs IC Symposium,1994,96-99.
  • 3Mohan S S,Hershenson M D M,Boyd S P and Lee T H.Bandwidth Extension in CMOS with Optimized On-Chip Inductors[J].IEEE J Solid-state Circuits,2000,35(3):346-355.
  • 4Shigematsu M,Sato M,Suzuki T,et al.A 49 GHz preamplifier with a transimpedance gain of 52 dB USing InP HEMTs[J].IEEE J Solid-state Circuits,2001,36(9):1309-1313.

引证文献1

固体电子学研究与进展
2009年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部