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一种偏置电流可调节的高效率2.4GHz锗硅功率放大器 被引量：2

A High Efficiency SiGe Power Amplifier with Bias Current Controlling Circuit
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摘要 基于IBM0.35μm SiGe BiCMOS工艺BiCMOS5PAe实现了一种偏置电流可调节的高效率2.4GHz锗硅功率放大器。该功率放大器采用两级单端结构和一种新型偏置电路,除射频扼流电感外,其它元件均片内集成。采用的新型偏置电路用于调节功率放大器的静态偏置电流,使功率放大器工作在高功率模式状态或低功率模式状态。在3.5V电源条件下,功率放大器在低功率模式下工作时,与工作在高功率模式下相比,其功率附加效率在输出0dBm时提高了56.7%,在输出20dBm时提高了19.2%。芯片的尺寸为1.32mm×1.37mm。 Based on IBM 0.35 μm SiGe BiCMOS technology BiCMOS5PAe,a high efficiency 2.4 GHz SiGe power amplifier with a novel bias current controlling circuit is reported.The novel bias circuit of this single-ended 2-stage power amplifier is used to switch the quiescent current to make the power amplifier operate in a high power or low power mode.Under a single supply voltage of＋3.5 V,this switching-mode power amplifier provides a PAE improvement up to 56.7% and 19.2% at the output power of 0 dBm and 20 dBm respectively, with the reduced quiescent current at low power mode compared to only operation at high power mode. The die size is only 1.32 mm×1.37 mm.
作者 彭艳军 王志功 宋家友
机构地区 东南大学射频与光电集成电路研究所 郑州大学信息工程学院
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2009年第3期364-368,共5页 Research & Progress of SSE
基金 863课题资助(2006AA03Z418)
关键词 功率放大器 锗硅 偏置电路 异质结双极型晶体管 power amplifier silicon germanium bias circuit heterojunction bipolar transistor
分类号 TN433 [电子电信—微电子学与固体电子学] TN722.7 [电子电信—电路与系统]
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参考文献8

  • 1Monroy A, Laurens M, Marty M, et al. BiCMOS: A high performance 0.35 μm SiGe BiCMOS technology for wireless applieations[C]. IEEE BCTM Technology Digest, 1999: 121-124.
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同被引文献25

  • 1LIAO H, CHIOU H. RF model and verification of through-silicon vias in fully integrated SiGe power ampli- fier [J]. IEEE Electron Device Letters, 2012, 32 (6): 809-811.
  • 2BENNETT H, BREDERLOW R, COSTA J, et al. De- vice and technology evolution for Si-based RF integrated circuits [J]. IEEE Transactions on Electron Devices, 2005, 52 (7): 1235-1258.
  • 3WALDROP J, CHANG M F. Negative differential resistance of A1GaAs/GaAs heterojunction bipolar transistors: in- fluence of emitter edge current [ J] .IEEE Electron Device Letters, 1995, 16 (1): 8-10.
  • 4TODOROVA D, MATHUR N, ROENKER K. Simula- tion and design of SiGe HBTs for power amplification at I0 GHz [C]// Proceedings of the International Semi- conductor Device Research Conference. Washington DC, USA, 2001: 248-251.
  • 5REID A R, KLECKNER T C, JACKSON M K, et al. Thermal resistance in trench-isolated Si/SiGe heterojunc- tion bipolar transistors [ J] .IEEE Transactions on Electron Devices, 2001, 48 (7): 1477-1479.
  • 6LINC H, SU Y K, JUANG Y Z, et al. The optimized geometry of the SiGe HBT power cell for 802. lla WLAN applications [J].IEEE Microwave and Wireless Compo- nentsIetters, 2007, 17 (1): 49-51.
  • 7JIN D Y, ZHANG W R, GUAN B L, et al. Optimum design methodology for thermally stable multi-finger power SiGe HBTs [C] // Proceedings of the International Workshop on Junction Technology. Shanghai, China, 2010: 1-4.
  • 8WALKEY D, CELO D, SMY T, et al. A thermal de- sign methodology for muhifinger bipolar transistor struc- tures [J]. IEEE Transactions on Electron Devices, 2002, 49 (8): 1375-1383.
  • 9GAO G B, MORKOC H, FRANK M C. Heterojunction bipolar transistor design for power applications [J]. IEEE Transactions on Electron Devices, 1992, 39 (9): 1987-1997.
  • 10阮颖,刘炎华,陈磊,赖宗声.一种2.4GHz全集成SiGe BiCMOS功率放大器[J].电子与信息学报,2011,33(12):3035-3039. 被引量：5

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固体电子学研究与进展
2009年 第3期

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