摘要
采用0.18μmCMOS工艺设计并制造了一款新型的应用于无线局域网的双频段低噪声放大器。设计中,通过切换输入电感和负载电感,来使电路分别工作在2.4GHz和5.2GHz频段。在1.8V的电源电压下,在2.4GHz和5.2GHz两个频段上,其增益分别达到了11.5dB和10.2dB,噪声系数分别是3dB和5.1dB。芯片总面积是0.9mm×0.65mm。
A novel dual-band low noise amplifier applied in Wireless LAN is designed and fabricated in 0.18 μm CMOS process.In this dual-band LNA,by switching the input inductors and load inductors,the gain and impedance matching are achieved at the 2.4 GHz and the 5.2 GHz operation frequency bands,respectively.With a 1.8 V power supply,the LNA has a gain of 11.5 dB at 2.4 GHz and 10.2 dB at 5.2 GHz,and the noise figure of 3 dB at 2.4 GHz and 5.1 dB at 5.2 GHz,respectively.The total die area is 0.9 mm×0.65 mm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2009年第3期373-377,共5页
Research & Progress of SSE
基金
上海AM基金(07SA04)
上海重点学科建设项目(B411)
