摘要
Ultraviolet photo-lithography is employed to introduce two-dimensional （2D） photonic crystal （PC） structure on the top surface of GaN-based light emitting diode （LED）. PC patterns are transferred to 460-rimthick transparent indium tin oxide （ITO） electrode by inductively coupled plasma （ICP） etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7°, which means that the light extraction efficiency is enhanced outstandingly.
Ultraviolet photo-lithography is employed to introduce two-dimensional （2D） photonic crystal （PC） structure on the top surface of GaN-based light emitting diode （LED）. PC patterns are transferred to 460-rimthick transparent indium tin oxide （ITO） electrode by inductively coupled plasma （ICP） etching. Light intensity of PC-LED can be enhanced by 38% comparing with the one without PC structure. Rigorous coupled wave analysis method is performed to calculate the light transmission spectrum of PC slab. Simulation results indicate that total internal reflect angle which modulated by PC structure has been increased by 7°, which means that the light extraction efficiency is enhanced outstandingly.
基金
the National Natural Science Foundation of China (Nos.60736037,60537010,and 60807010)
the National "973" Program of China (Nos.2009CB320300 and 2010CB934104)
