摘要
实验得到不同温度下应变ＩｎＧａＡｓ／ＧａＡｓ量子阱的光伏谱，通过理论计算与实验结果的比较，对各谱峰进行了指认．本文着重考察各样品中１１Ｈ跃迁的激子谱峰的半宽随温度及阱宽的变化，讨论谱峰展宽机制中的声子关联、混晶组分起伏及界面不平整对线宽的影响．
Abstract The photovoltaic effect of strained InGaAs/GaAs quantum well is studied at varied temperatures. With the comparis of the thoretical calculations and expreimental results, the transition peaks between the sub bands are identified. The full width at half maxium (FWHM) of the transition peaks as a function of temperature and well width for different samples is investigated emphatically. The influences of exciton phonon coupling, alloy disorder and interface roughness on the broadening mechanism of the transition peaks is discussed.
基金
国家自然科学基金
福建省自然科学基金
