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飞秒激光对半导体材料及器件烧蚀效应研究进展 被引量：2

Research Progress of Semiconductor and Electrophotonic Detector Ablation by Femtosecond Laser
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摘要 简要评述了国内外关于飞秒激光烧蚀半导体材料的理论研究、数值模拟和实验研究进展,报道了飞秒激光对几类光电探测器件损伤阈值的研究结果。 Due to the progress of ultrashort laser systems, the research of interaction between femtosecond laser and semiconductor is developed. The progresses of numerical simulation and experimental research are reviewed. The result of semiconductor and electrophotonic detector ablation by femtosecond laser is reported.
作者 辛建婷 刘国栋
机构地区 中国工程物理研究院流体物理研究所
出处 《激光与光电子学进展》 CSCD 北大核心 2009年第10期64-70,共7页 Laser & Optoelectronics Progress
关键词 飞秒激光 半导体材料 烧蚀 femtosecond laser semiconductor ablation
分类号 V261.8 [航空宇航科学与技术—航空宇航制造工程]
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参考文献35

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  • 5E. G. Gamaly, A. V. Rode, B. Luther-Davies et al.. Ablation of solids by femtosecond lasers: ablation mechanism and ablation thresholds for metals and dielectrics[J]. Phys. of Plasmas, 2002, 9(3): 949-957.
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激光与光电子学进展
2009年 第10期

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