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基于MEMS开关的ET OFDM高效率PA设计

Study of MEMS ET OFDM PA of high efficiency
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摘要 本文研究了基于MEMS开关的ET结构OFDM功率放大器,采用预失真功率放大器的结构可提高功率放大器效率。分析OFDM的发射标准,利用低损耗,高隔离度的MEMS开关来实现ET结构电压选择。利用GaN HEMT(Heterostructure Field-Effect Transistors)RF382l晶体管建立了基于MEMS开关的ET结构的PA模型,进行了实际电路设计,并利用了ADS软件进行仿真分析,输入1W的OFDM信号时,漏极效率为52%,EVM约为2.94%,输出功率为50W,增益为13dB.该功率放大器完全可以应用于OFDM系统中。 This paper study the MEMS switch ET OFDM PA, and its efficiency is improved use the DPD structure. ET structure voltage is selected by MEMS switch due the MEMS switch have good insert loss and isolation. The OFDM transmitter specific is analyzed and PA model is built with ET structure, and then design the circuit. The circuit is simulated by ADS, and DE is 50% and EVM is 2.94% when input power is 1W. Output power about 50W and gain is 13dB. This PA is used in OFDM system.
作者 魏德芳 赵继德
机构地区 鲁东大学物理与电子工程学院
出处 《激光杂志》 CAS CSCD 北大核心 2009年第5期30-31,共2页 Laser Journal
关键词 放大器 ET OFDM WIMAX PA ET OFDM WIMAX.
分类号 TN248.1 [电子电信—物理电子学]
  • 相关文献

参考文献8

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共引文献16

激光杂志
2009年 第5期

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