硅衬底上ZnO纳米线的制备及其导电性能(英文)

Electric Property of Nanostructural ZnO Fabricated on Silicon Substrate

采用无催化剂的气相输运方法在n-Si衬底上制备了ZnO纳米线.其直径约100nm至200nm,长度约几微米,X射线衍射图谱的所有峰位与典型的六角纤锌矿ZnO相匹配.霍尔效应测量表明纳米结构ZnO具有良好的导电性.纳米ZnO/n-Si的电压电流关系显示其具有整流特性.基于纳米ZnO/n-Si界面的能带结构对其导电特性进行了分析讨论。

Zinc oxide nanowires have been fabricated on a n-type silicon substrate by a simple catalyst-free vapor phase transport.The size of the nanowires is about 100 nm to 200 nm in diameter and several tens microns in length.All peaks of X-ray diffraction pattern matched with the orientation data of the typical hexagonal ZnO.Hall effect measurement demonstrated that the nanostructural ZnO had good conductivity.The current-voltage dependence of nano-ZnO/n-Si showed rectificative behavior.The discussion on the electrical behavior was carried out based on the energy band structure of nano-ZnO/n-Si interface.