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无线传感网SoC芯片中4.8GHz压控振荡器设计

4.8 GHz Voltage Controlled Oscillator for WSN SoC
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摘要 采用SMIC0.18μm1P6M RF CMOS工艺设计了一个4.8GHzLC压控振荡器,该压控振荡器应用于无线传感SoC芯片射频前端频率综合器中。电路核心采用带电阻反馈的差分负阻结构,因此具有良好的相位噪声性能;2bit的开关电容阵列进一步提高了电路的调谐范围;共源级输出缓冲提供了较好的反向隔离度。所设计的芯片版图面积为600μm×475μm。在电源电压为1.8V时,后仿真结果表明,电路调谐范围最高可达40%,有效地补偿了工艺角偏差;在4.95GHz处,后仿真测得的相位噪声为-125.3dBc/Hz@3MHz,优于系统要求5.3dB;核心电路工作电流约5.2mA。 A 4.8 GHz LC voltage controlled oscillator （VCO） used in frequency synthesizer for Wireless Sensor Network （WSN） SoC is designed based on SMIC 0. 18-μm 1P6 M RF CMOS process. The core circuit adopting differential negative resistance structure with resistor feedback achieves good phase noise performance. The 2 hit switch capacitor array provides extra tuning range. The output buffer of common source structure is of decent reverse isolation. The layout size is 600μ×475 μm. With a 1.8 V supply voltage, the post-simulation shows that the achieved maximum 40% tuning range can perfectly compensating the deviation due to process corners. The post-simulation measured phase noise of-125.3 dBc/Hz@3 MHz with the carrier of 4. 95 GHz is 5.3 dB better than the design target. The operating current of core circuit is about 5.2 mA.
作者 樊祥宁 郑浩 陈晓光
机构地区 东南大学射频集成电路与系统教育部工程研究中心
出处 《电子器件》 CAS 2009年第4期733-736,741,共5页 Chinese Journal of Electron Devices
基金 国家863计划资助项目(目标导向类2007AA01Z2A7)
关键词 无线传感网 RFCMOS工艺 LC压控振荡器 相位噪声 宽调谐范围 wireless sensor network RF CMOS process LC VCO phase noise wide tuning range
分类号 TN752 [电子电信—电路与系统] TN753.9 [电子电信—电路与系统]
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参考文献9

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二级参考文献11

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2009年 第4期

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