AlGaAs窄条型自脉冲半导体激光器的模拟设计

Simulation of AlGaAs Narrow Stripe Semiconductor Lasers for Self-pulsating Operation

采用一维计算模型对窄条型自脉冲激光器的结构进行了全面的模拟设计.数值计算模型基于有效折射率法和窄条型结构的自维持脉冲机理,在有源层载流子浓度调节下光场产生的自聚焦和散焦现象增强了自脉冲效应.多量子阱AlGaAs器件的设计输出自脉冲频率达到1.45GHz,完全符合实际器件参数.

A complete design of narrow stripe semiconductor lasers for self-pulsating operation is realized by using a 1D simulation model. This numerical model is based on the effective method and self-sustained pulsation mechanism in the narrow stripe lasers. The self-pulsation effect is enhanced by the self focusing and defocusing of the optical field which is dependent on the modification of carrier densities in the active region. The resulting AlGaAs device with multi-QWs showed self-pulsation frequency of 1.45 GHz, which is consistent with practical values.