摘要
High frequency modeling of quantum-well(QW) laser diodes for optoelectronic integrated circuit(OEIC) design is discussed in this paper.Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and high frequency.The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are analyzed to obtain a physics-based high frequency model.The model is based on the physical rate equations,and is versatile in that it permits both small-and large-signal simulations to be performed.Several procedures of the high frequency model parameter extraction are also discussed.Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response,obtained over a wide range of optical output powers.
High frequency modeling of quantum-well （QW） laser diodes for optoelectronic integrated circuit （OEIC） design is discussed in this paper, Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and high frequency. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are analyzed to obtain a physics-based high frequency model, The model is based on the physical rate equations, and is versatile in that it permits both small- and large-signal simulations to be performed, Several procedures of the high frequency model parameter extraction are also discussed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers.
基金
Supported by the National Natural Science Foundation of China (Grant No.6053-6010)
Program for New Century Excellent Talents
