高介电栅介质ZrO_2薄膜的物理电学性能

Physical and Electrical Properties of ZrO_2 Gate Dielectrics Film

采用脉冲激光沉积方法在Si衬底上沉积了ZrO2栅介质薄膜,X射线衍射分析表明该薄膜经过450℃退火后低介电界面层得到抑制,仍然保持非晶状态;电学测试显示10 nm厚ZrO2薄膜的等效厚度为3.15 nm,介电常数12.38,满足新型高介电栅介质的要求,在-1 V偏压下Al/ZrO2/Si/Al电容器的漏电流密度为1.1×10-4A/cm2.

ZrO2 gate dielectric films was deposited on Si substrate by pulse laser deposition,X-ray diffraction reveals the ZrO2 gate dielectric films are still amorphous after annealed at 450 ℃ in O2 ambient,there is no product on the interface.Electrical properties testing shows the equivalent oxide thickness of 10 nm-thick ZrO2 film is 3.15 nm and dielectric constant is 12.38.The leakage current density of Al/ZrO2/Si/Al sample at-1 V is 1.1×10^-4 A/cm^2.