摘要
采用脉冲激光沉积方法在Si衬底上沉积了ZrO2栅介质薄膜,X射线衍射分析表明该薄膜经过450℃退火后低介电界面层得到抑制,仍然保持非晶状态;电学测试显示10 nm厚ZrO2薄膜的等效厚度为3.15 nm,介电常数12.38,满足新型高介电栅介质的要求,在-1 V偏压下Al/ZrO2/Si/Al电容器的漏电流密度为1.1×10-4A/cm2.
ZrO2 gate dielectric films was deposited on Si substrate by pulse laser deposition,X-ray diffraction reveals the ZrO2 gate dielectric films are still amorphous after annealed at 450 ℃ in O2 ambient,there is no product on the interface.Electrical properties testing shows the equivalent oxide thickness of 10 nm-thick ZrO2 film is 3.15 nm and dielectric constant is 12.38.The leakage current density of Al/ZrO2/Si/Al sample at-1 V is 1.1×10^-4 A/cm^2.
出处
《河北大学学报(自然科学版)》
CAS
北大核心
2009年第5期484-488,554,共6页
Journal of Hebei University(Natural Science Edition)
基金
中科院研究生科学与社会实践资助专项创新研究项目
中科院知识创新工程青年人才领域前沿项目(072C201301)
关键词
ZRO2薄膜
高介电栅介质
等效厚度
漏电流
ZrO2 film
high-κ gate dielectrics
equivalent oxide thickness
leakage current