摘要
为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18dB,1×2光开关消光比约21dB,谐振环的消光比8~12dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.
In order to realize the practical application of the Silicon-based optoelectronic devices,the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N,Bipolar Mode Field Effect Transistor(BMFET),Metal Oxide Semiconductor(MOS)and PN junction are reviewed.And our work in design and fabrication of Silicon-based CMOS photonic devices is reported.The devices fabricated by commercial CMOS process have expected results.The extinction ratios of an optical modulator,a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8 ~ 12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2009年第10期2485-2490,共6页
Acta Photonica Sinica
基金
国家重大基础研究发展计划项目(2007CB613405)资助
华为科技基金项目的资助
关键词
集成光学
硅基
载流子色散效应
CMOS光子器件
Integrated optics
Silicon-based
Carrier dispersion effect
CMOS photonic devices